Ingénieur de recherche CNRS
Ludovic Largeau est le responsable de la plateforme d'analyse des matériaux (PANAM). Il encadre 3 ingénieurs.
Ensemble, ils développent leurs connaissances et leurs outils d'analyses structurales et chimiques des matériaux à l'échelle atomique aussi bien qu'à l'échelle nanométrique dans le cas des caractérisations optiques.
La plateforme dispose de la dernière génération d'équipements pour la diffraction des rayons X (DRX), la microscopie électronique (MET) par transmission avec microanalyse (EDS), la microscopie à force atomique (AFM) et la cathodoluminescence résolue en temps (CLRT).
Il a personnellement dévelopé des techniques en diffraction des rayons X comme GIXRD, HRXRD, figure de poles, réflectivité, et in-operando. Il est aussi spécialisé dans la correction des aberrations sphériques en mode STEM et des techniques associées pour l'analyse chimique (high angle annular dark field HAADF, energy dispersive X-ray spectroscopy EDXS and energy filtered TEM EFTEM). Il a aussi développé les analyses du champ de contraintes par analyse géométrique de phase en utilisant les images STEM haute résolution, la diffraction de faisceau éléctronique convergent (CBED) et les cartographies de phase et de contrainte par 4DSTEM.
Son domaine de recherche porte sur les interfaces d'hétéosystème et de III-V nanofils, sur les IV-IV semiconducteurs,sur le graphene et sur les oxydes cristallins.
Il a été à l'origine du projet d'ANR Equipex Tempos (2010-2022). Il a été responsable du sous projet Nanomax, la plateforme d'analyse nanométrique structurale et chimique. Et il a participé au cahier des charges de la plateforme de croissance in-situ (Nanomax).
Il est le pricncipal investisseur dans le projet IPCEI miTPGaN ein collaboration avec XFAB.
Il a de nombreuses collaborations, aussi bien en France qu'à l'international avec des institutions privés et publics.
Il a dirigé 2 stages et 4 théses.
Il est auteur et co-auteur de 202 publications, son h-index est 37.
Ferroelectricity in Epitaxial Tetragonal ZrO2 Thin Films
Advanced Electronic Materials, 2023
Ferroelectric ZrO 2 phases from infrared spectroscopy
Journal of Materials Chemistry C, 2023, 11 (32), pp.10931-10941
Origine du twist entre les îlots de croissance de semi-conducteurs tétra-coordonnés hétéroépitaxiés selon des directions hexagonales.
Conférence MATEPI 2023, Jul 2023, Paris, France
What Triggers Epitaxial Growth of GaN on Graphene?
Crystal Growth & Design, 2023, 23 (9), pp.6517-6525.
Impact of the crystallographic variants of VO2 thin films on c-and r-cut sapphire on structural phase transition and radiofrequency properties
Applied Physics Letters, In press,
Strain generated by the stacking faults in epitaxial SrO(SrTiO 3 ) N Ruddlesden–Popper structures
Journal of Applied Crystallography, 2023, 56 (5), pp.1426-1434
Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
EPJ Photovoltaics, 2023, WCPEC-8: State of the Art and Developments in Photovoltaics, 14, pp.1
On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
Journal of Applied Physics, 2022, 132 (16), pp.165102
Epitaxy and Characterization of InP/InGaAs Tandem Solar Cells grown by MOVPE on InP and Si Substrate
8th World Conference on Photovoltaic Energy Conversion (WCPEC-8), Sep 2022, Milan, Italy
Magneto‐ionics in annealed W/CoFeB/HfO2 thin films
Advanced Materials Interfaces, 2022, 9 (36), pp.2200690
Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO 2 by surface energy
Physical Review Materials, 2022, 6 (7), pp.074406
Heterogeneous Integration of Doped Crystalline Zirconium Oxide for Photonic Applications
IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28 (3), pp.6100413
Synthesis of Nano-Oxide Precipitates by Implantation of Ti, Y and O Ions in Fe-10%Cr: Towards an Understanding of Precipitation in Oxide Dispersion-Strengthened (ODS) Steels
Materials, 2022, 15 (14), pp.4857
Is a substrate miscut really required for high quality III-V/Si monolithic integration?
21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates
Philosophical Magazine, 2021, 101 (20), pp.2189-2199
Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors
Journal of Physical Chemistry C, 2021, 125 (31), pp.17078-17087
Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)
Nanotechnology, 2020, 31 (45), pp.459501
Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes
Nanotechnology, 2020
In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene
Crystal Growth & Design, 2020, 20 (6), pp.4013-4019
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut
Physical Review Materials, 2020, 4 (5), pp.053401
Erbium-doped oxide for optical gain on hybrid silicon photonics platforms (Student Paper)
European Conference on Integrated Optics-ECIO, Apr 2020, Paris, France
Erbium-Doped Yttria-Stabilized Zirconia Thin Layers for Photonic Applications
IEEE Journal of Quantum Electronics, 2020, 56 (2), pp.1-7
Exploring the shear strain contribution to the uniaxial magnetic anisotropy of (Ga,Mn)As
Journal of Applied Physics, 2020, 127 (9), pp.093901
Selective Area Growth of GaN Nanowires on Graphene Nanodots
Crystal Growth & Design, 2020, 20 (2), pp.552-559
Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization
Thin Solid Films, 2020, 694, pp.137737
Erbium-doped yttria-stabilised zirconia thin films grown by pulsed laser deposition for photonic applications
Thin Solid Films, 2020, 693, pp.137706
Third Order Nonlinear Optical Susceptibility of Crystalline Oxide Yttria-Stabilized Zirconia
Photonics research, 2020, 8 (2), pp.110-120
Selective Area Growth of GaN Nanowires on Graphene Nanodots
Crystal Growth & Design, 2019, 20 (2), pp.552-559
A Study on the Strain Distribution by Scanning X-ray diffraction on GaP/Si for III-V Monolithic Integration on Silicon for Nonlinear Optics
Rayons X et Matière 2019, Nov 2019, Nancy, France
Piezoelectric properties of axial InGaN/GaN Nanowires
Journées Nationales des Nanofils semiconducteurs - J2N 2019, Nov 2019, Lyon, France
Al5+αSi5+δN12, a new Nitride compound
Scientific Reports, 2019, 9 (1)
GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors
Applied Sciences, 2019, 9 (17), pp.3528
A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon
Journal of Applied Crystallography, 2019, 52 (4), pp.809-815
GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors
Applied Sciences, 2019, 9, pp.3528
Engineering erbium-doped oxide thin layers for integrated photonics
International School of Oxide Electronics, Jun 2019, Cargese, France
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
Nanotechnology, 2019, 30 (21), pp.214005
Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques
Nanotechnology, 2019, 30 (21), pp.214006
Erbium-doped Yttria-stabilized Zirconia thin layers for photonic applications
European Conference on Integrated Optics-ECIO, Apr 2019
Solar Water Splitting: surface energy engineering of GaP Template on Si
European Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Optical gain evaluation on rare-earth doped Yttria-stabilized zirconia for hybrid integration on silicon photonics platforms
Integrated Optics: Design, Devices, Systems and Applications, Apr 2019, Prague, France. pp.25
A universal mechanism to describe III-V epitaxy on Si
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor deposition
SPIE OPTO : Quantum Sensing and Nano Electronics and Photonics XVI, SPIE PHOTONIC WEST, Feb 2019, San Francisco, United States
Towards optical amplification in complex functional oxides: exploring optical gain in erbium-doped yttria-stabilized zirconia waveguides
Integrated Optics: Devices, Materials, and Technologies XXIII, Feb 2019, San Francisco, France. pp.37
Exploring nonlinear optics effects on rare-earth doped yttria-stabilized zirconia on silicon nitride photonic platform
Nonlinear Photonics Winter School, Jan 2019, Trento, Italy
GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity
Journal of Crystal Growth, 2019, 519, pp.84-90
GaP Template on Si for Solar Water Splitting: surface energy engineering
nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China
III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
A general III-V/Si growth process description
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on Silicon
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Yttria-Stabilized Zirconia waveguides for linear and nonlinear optics
E-MRS 2018, Jun 2018, Strasbourg, France
Indefinite Permittivity in Srn+1TinO3n+1 Ruddlesden-Popper Thin Layers Grown by Molecular Beam Epitaxy
16è Journées Nano, Micro et Optoélectronique (JNMO 2018), Jun 2018, Agay, France
Universal description of III-V/Si epitaxial growth processes
Physical Review Materials, 2018, 2 (6), pp.060401(R)
Proposition of a model elucidating the AlN-on-Si (111) microstructure
Journal of Applied Physics, 2018, 123 (21), pp.215701
Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE
physica status solidi (a), 2018, 215 (9), pp.1700640
Functional oxide waveguides for nonlinear optics
SPIE Photonics europe 2018, Apr 2018, Strasbourg, France
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
Crystal Growth & Design, 2018, 18 (4), pp.2545-2554
Functional oxide waveguides for nonlinear optics
MRS spring 2018, Apr 2018, Phoenix, Arizona, United States
Engineering the properties of functional oxides and integrating them on Si and GaAs thanks to molecular beam epitaxy
Journées nationales du GDR OXYFUN, Mar 2018, Piriac-sur-mer, France
High-quality crystalline yttria-stabilized-zirconia thin layer for photonic applications
Physical Review Materials, 2018, 2 (3), pp.35202 - 35202
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
Crystal Growth & Design, 2018, 18 (4), pp.2545-2554
Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography
Journal of Physical Chemistry C, 2018, 122 (29), pp.16704--16714
Addresse Email
ludovic.largeau@c2n.upsaclay.fr
Numéro de Bureau
C215
Addresse
C2N
10 Bd Thomas Gobert
91120 Palaiseau FRANCE
Numéro de télèphone
+33 1 70 27 05 07
Domaine de recherche
