Electronic Microscopy by Transmission (TEM)
This instrument allow : a high analysis of the interfaces quality, the local structure determination, the local orientation and chemical composition of samples, the study of relaxation modes and the structure resolution. All with a sub-nanometric spatial resolution. Usual technics are conventional imaging, quantitative contrast TEM 2 waves and STEM-HAADF analysis, high resolution imaging, X-ray microanalysis, convergent beam diffraction and 4DSTEM analysis.
Electronic diffraction imaging with 5 waves convergent beam to determine crystal polarity of GaAs crystal – C2N study.
STEM-HAADF imaging of GaSb layer deposit in MBE on Si substrat. Proof of perfect dislocations interface-edge type to accomodate lattice parameter gap. Illustrate the III-V/Si monocrystal growth without threading dislocations - C2N-IES collaboration.
STEM-HAADF imaging et chemical maps by EDX of (Pb,Zr)TiO3/SrTiO3 interface . Illustrate epitaxy obtained by annealing of a sol-gel deposit – C2N-INL collaboration.
STEM-HAADF imaging of partial dislocations (red) and twins (blue) in InP layer deposit in MBE on SrTiO3 substrat, Illustrate of III-V/oxyde monocrystal growth, to determine epitaxy relationship and characterize the interface – C2N-INL collaboration.
TEM cross section realized with FIB
FIB lift-out : animation film - 15.7 MB