Christophe David

CNRS research engineer (IR CN)

After studying at the University of Orsay, I obtained a DUT in Physical Measurements and Materials and joined the CNRS at the L2M (Microstructures and Microelectronics Laboratory) in Bagneux. I joined France Telecom's research laboratories in 1992 as an assistant engineer in the nanoelectronics group. I built nanostructures and supported an emerging near-field characterization activity on a commercial system. This activity developed with the aim of spectroscopic measurements under ultra-high vacuum and low temperature. Between 2001 and 2018, I joined the LPN (photonics and nanostructures laboratory) located in Marcoussis and coupled to the III/V Lab.  In 2007, following the development of an original nano-lithography technique, I became a design engineer in materials science and near-field microscopy characterization. Then, in 2009, I moved on, following an essential contribution to the realization of a first demonstration of spin-polarized measurements (SP-STM) by the realization of magnetic tips and their TEM characterizations by the LPN structural analysis team, as well as my contribution to setting up a project for a new instrument dedicated to this unique technique. Finally, in 2018, I took part in the creation of C2N (nanoscience and nanotechnologies). At PANAM in the Materials department, I'm in charge of AFM surface analysis and near-field experimental development for the whole of C2N, with a fleet of 4 AFMs (atomic force microscopes). I also support a research activity in microscopy and tunnel spectroscopy (STM/STS) to explore the electronic and structural properties of materials at the atomic scale. These two facilities operate under ultra-high vacuum and low temperature, one of which is equipped with a 3-axis magnetic field.

Activities focus on nanostructures based on III-V semiconductors, Si/Ge, new 2D materials, functional oxides and metals.

​Publications

2023

• Valeria Sheina , Guillaume Lang , Vasily Stolyarov , Vyacheslav Marchenkov , Sergey Naumov , and al
  Hydrogenic spin-valley states of the bromine donor in 2H-MoTe2
  Communications Physics, 2023, 6 (1), pp.135.
   

2022

• K. Badiane , G. Rodary , M. Amato , A. Gloter , C. David , and al.
  Atomic-scale visualization of the p − d hybridization in III-V semiconductor surfaces doped with transition metal impurities
  Physical Review B, 2022, 105 (23),
   

• Jacques Gierak , Gilles Raynaud , Caroline Guiziou , Jean René Coudevylle , Ali Madouri , and al.
  Selective growth of graphene films on Gallium-Focused Ion Beam irradiated domains
  65th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN 2022), May 2022, La Nouvelle Orléans.

2020

• Gilgueng Hwang , Christophe David , Alisier Paris , Dominique Decanini , Ayako Mizushima , and al.
  A Rapid, Reliable and Less-destructive On-chip Mass Measurement for 3D Composite Material Testing Microstructures
  33rd International Conference on Microelectronic Test Structures (ICMTS 2020), May 2020, Edimbourg.
   

2019

• F.Hamouda, E.Herth , Christophe David, F.Bayle, M.P Plante, A Martin, and al.
  Electrical and optical properties of sputtered ultra thin indium tin oxide films using xenon/argon gas
  Materials Science: Materials in Electronics, 2019, 30, pp 8508–8514.
   

• Guillemin Rodary , Lorenzo Bernardi , Christophe David , Bruno Fain , Aristide Lemaitre , and al
  Real Space Observation of Electronic Coupling between Self-Assembled Quantum Dots
  Nano Letters, 2019, 19 (6), pp.3699-3706.

   

2018

• Sergio Vlaic , Stéphane Pons , Tianzhen Zhang , Alexandre Assouline , Alexandre Zimmers , and al.
  Superconducting parity effect across the Anderson limit
  Nature Communications, 2017, 8 (1), pp.14549.

   

• Zeineb Ben Aziza , Debora Pierucci , Hugo Henck , Mathieu G. Silly , Christophe David , and al.
  Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures
  Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 96 (3), pp.0354