X-Ray diffraction multi-techniques (XRD)
« Smartlab » RIGAKU Rotating anode diffractometer multi-settings
« XPert Pro MRD » PANalytical
2 sealed tube multi-settings diffractometers
GaN (10-10) pole figure to determine crystallographic orientation relationship of epitaxied GaN nanofils on Si (001) susbtrat – C2N studies.
Reciprocal space map about (004) and (115) of GaMnAs/InGaAs/GaAs structure to quantify stress and components. GaMnAs layer is strained by InGaAs layer which is relaxed on GaAs substrat. Perpendicular of surface, a magnetic phenomenon is due by the deformation of GaAs layer